By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)
This publication presents a single-source connection with one of many more difficult reliability matters plaguing glossy semiconductor applied sciences, unfavourable bias temperature instability. Readers will reap the benefits of state-of-the paintings insurance of study in themes comparable to time established illness spectroscopy, anomalous disorder habit, stochastic modeling with extra metastable states, multiphonon idea, compact modeling with RC ladders and implications on gadget reliability and lifetime.
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Extra resources for Bias Temperature Instability for Devices and Circuits
43. S. Snyder, J. Suehle, “Detecting Breakdown in Ultra-thin Dielectrics Using a Fast Voltage Ramp”, Int. Integrated Rel. Workshop Final Report, pp. 118–123, 1999. 1 Bias Temperature Instability Characterization Methods 31 44. A. Kerber, L. Pantisano, A. Veloso, G. Groeseneken, and M. , vol. 47, no. 4/5, pp. /May 2007. 45. Andreas Kerber, Siddarth A. Krishnan, and Eduard Albert Cartier, “Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High-k Stacks”, IEEE Electron Device Letters, Vol.
Again, this 1 ms is originated in the finite speed of the voltage source. 2 On-Chip Device Heating a 41 b Fig. 6 (a) The heating power when turning the heater voltage abruptly on (1) and off (2). The chuck temperature was −60 ◦C. During the heater calibration specific voltages were determined to reach certain device temperatures. At the moment the heating voltage is turned on (1) or off (2), we record the heating current in parallel and calculate PPH . (b) The heating and cooling characteristics of the device when turning the heater power abruptly on (1) or off (2).
21 Schematic diagram of the ultrafast on-the-fly characterization setup proposed in . The drain current at stress is first monitored using the current voltage converter (IVC) and a digital oscilloscope. At longer times, the system is switched to a conventional source measurement unit (SMU) there is no transconductance degradation during the stress condition, as typically observed for PBTI, the threshold voltage shift can be directly calculated using the relation ΔVT = ΔId gm . If, however, transconductance degradation is observed during the stress, the transformation of the measured current degradation into a voltage shift becomes more difficult and a gm degradation term needs to be included .
Bias Temperature Instability for Devices and Circuits by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)