By Rene Hubner
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Extra info for Advanced Ta-Based Diffusion Barriers for Cu Interconnects
Based on the experimental results, the thermal stabilities and the failure mechanisms of the various Ta-based diffusion barriers are comparatively discussed. This chapter closes with concluding remarks. 1. ) equipped with loadlock, dealer, ICP (inductively coupled plasma) soft-etch chamber, Cu-PVD module, and Ta/Ta5Si3-PVD module, Ta-based diffusion barriers and Cu metallization layers were deposited onto blanket and thermally oxidized (100) Si wafers. In the latter case, a 140 nm thick silicon oxide layer was prepared by annealing of blanket Si wafers at T = 1000 °C for t = 2 h in oxygen ambience.
3 as-dep. 0 Intensity [arb. 2 as-dep. 5 Sputter time [s] Figure 14. GDOES depth profiles of the Si distribution (a) and of the O distribution (b) for the Ta56Si19N25/SiO2/Si sample in the as-deposited state and after annealing at several temperatures T for t = 1 h. In summary, there are two processes which degrade the integrity of Ta-Si-N layers deposited onto thermal oxide: A Ta73Si27 film reacts with SiO2 to form Ta2O5, while for layers containing nitrogen, a crystallization process is observed first.
In this study, depth profiles were obtained for copper, tantalum, silicon, nitrogen, oxygen, and carbon with a depth resolution of < 5 nm at the sample surface. 1 nm. 5 mm). However, since the course of the depth profiles can be significantly influenced if conductive and nonconductive parts of the sample are present at the same time, physical effects have to be thoroughly separated form sample properties . To detect Cu traces within the Ta-based diffusion barrier layers, secondary ion mass spectroscopy (SIMS) measurements were performed with O2+ primary ions of 1 keV energy employing a dynamically double-focusing secondary ion mass spectrometer IMS 6f (Cameca).
Advanced Ta-Based Diffusion Barriers for Cu Interconnects by Rene Hubner